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| ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES * BVDSS = 100V * Low Threshold DEVICE MARKING * 410 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25C Pulsed drain current Gate-source voltage Power dissipation at T amb =25C Operating and storage temperature range PINOUT TOP VIEW SYMBOL V DS V DGR ID I DM V GS P tot T j :T stg VALUE 100 100 170 680 20 360 -55 to +150 SOT23 UNIT V V mA mA V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Drain-source breakdown voltage Gate-source threshold voltage Gate-body leakage Zero gate voltage drain current Static drain-source on-state resistance (1) Forward transconductance (1)(2) Input capacitance (2) Common source output capacitance (2) Reverse transfer capacitance (2) Turn-on delay time Rise time (2)(3) (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 80 100 0.5 TYP. MAX. UNIT CONDITIONS V I D =0.25mA, V GS =0V I =1mA, V DS = V GS D 1.5 50 500 8 12 V nA nA V GS =20V, V DS =0V V DS =100V, V GS =0V V GS =4.5V, I D =150mA V GS =3V, I D =50mA mS 25 9 4 10 10 15 25 pF pF pF ns ns ns ns V DS =25V, I D =100mA V DS =25V, V GS =0V, f=1MHz V DD 30V, I D =280mA Turn-off delay time (2)(3) Fall time (2)(3) NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ISSUE 2 - OCTOBER 2006 1 SEMICONDUCTORS ZXM41N0F PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM A B C D F G 0.37 0.085 Min 2.67 1.20 Max 3.05 1.40 1.10 0.53 0.15 0.015 0.0034 Inches Min 0.105 0.047 Max 0.120 0.055 0.043 0.021 0.0059 DIM H K L M N Millimeters Min 0.33 0.01 2.10 0.45 Max 0.51 0.10 2.50 0.64 Inches Max 0.013 0.0004 0.083 0.018 Max 0.020 0.004 0.0985 0.025 0.95 NOM 10 TYP 0.0375 NOM 10 TYP 1.90 NOM 0.075 NOM (c) Zetex Semiconductors plc 2006 Europe Zetex GmbH Kustermann-Park Balanstrae 59 D-8541 Munchen, Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquaters Zetex plc Fields New Road, Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - OCTOBER 2006 SEMICONDUCTORS 2 |
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